Ultra-low noise HEMTs for deep cryogenic low-frequency and high-impedance readout electronics

Speaker：Dr. Yong JIN（Research Director at CNRS;CNRS/LPN,route de Nozay, 91460 Marcoussis, France yong.jin@lpn.cnrs.fr）

Abstract

In order to fill the gap oflow-temperature and low-frequency noise field-effect transistors and to meetthe needs in various experiments under deep cryogenic conditions, speciallydesigned HEMTs with different gate capacitances have been fabricated andcharacterized at 4.2 and 77 K. At 4.2 K and with an appropriate gatecapacitance, the obtained lowest input noise voltage at 1 Hz is 6 nV/Hz^1/2;the lowest input noise current at 1 Hz is about 3 aA/Hz^1/2; theirwhite noise voltage is about 0.2 nV/Hz^1/2; and for switchapplications, the channel resistance can be varied from about 10 Ω to morethan 10 GΩ with a gate leakage current lower than 1 pA.

References:

- Ultra-low noise high electronmobility transistors for high-impedance and low-frequency deep cryogenicreadout electronics,Q. Dong, Y. X. Liang, D. Ferry, A. Cavanna, U.Gennser, L. Couraud and Y. Jin. Appl. Phys. Lett. 105, 013504(2014).

- Insight into low frequencynoise induced by gate leakage current in AlGaAs/GaAs high electron mobilitytransistors at 4.2 K, Y. Liang, Q. Dong, M.-C. Cheng, U. Gennser, A.Cavanna and Y. Jin. Appl. Phys. Lett. 99, 113505 (2011).

- Evidence of a fully ballisticone-dimensional field-effect transistor: Experiment and simulation,E.Gremion, D. Niepce, A. Cavanna, U. Gennser and Y. Jin. Appl. Phys. Lett.97, 233505 (2010).

Applications:

- Ionization Readout of CDMSDetectors with Low Power, Low Noise HEMTs,A. Phipps, Y. Jin, B.Sadoulet, J. Low Temp. Phys. 176, 470 (2014)

http://cdms.berkeley.edu/cdms_collab.html

- Quantum limit of heat flowacross a single electronic channel, S. Jezouin, F. Parmentier, A. Anthore,U. Gennser, A. Cavanna, Y. Jin, F. Pierre. Science 342, 601(2013)

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